Effects of Si-29 and H-1 on the near-zero field magnetoresistance response of Si/SiO2 interface states: Implications for oxide tunneling currents

Elias B. Frantz; David J. Michalak; Nicholas J. Harmon; Eric M. Henry; Michael E. Flatte; Sean W. King; James S. Clarke; Patrick M. Lenahan

doi:10.1063/5.0066640

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Effects of Si-29 and H-1 on the near-zero field magnetoresistance response of Si/SiO2 interface states: Implications for oxide tunneling currents

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Effects of Si-29 and H-1 on the near-zero field magnetoresistance response of Si/SiO2 interface states: Implications for oxide tunneling currents

Elias B. Frantz, David J. Michalak, Nicholas J. Harmon, Eric M. Henry, Michael E. Flatte, Sean W. King, James S. Clarke and Patrick M. Lenahan

Applied physics letters, Vol.119(18), 184101

11/01/2021

DOI: 10.1063/5.0066640

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Abstract

We report on a study that offers fundamental physical insight into an important phenomenon in solid state device physics, tunneling in Si/SiO2. We observe near-zero field magnetoresistance via spin-dependent trap-assisted-tunneling in both unpassivated and passivated Si/SiO2 and Si-28/(SiO2)-Si-28 metal-insulator-semiconductor (MIS) capacitors. A previous report, which utilized electrically detected magnetic resonance and NZFMR on these devices, indicates a surprising conclusion: the observed trap-assisted tunneling spectra are dominated by silicon dangling bonds back bonded to silicon at the Si/SiO2 interface, P-b0 and P-b1 centers. In this study, the four sets of samples are virtually identical, apart from the presence or absence of either H-1 and Si-29. We observed a substantial narrowing of the NZFMR response with the removal of Si-29 nuclei and a substantial broadening with the addition of H-1. Since superhyperfine interactions between Si-29 nuclei P-b at the Si/SiO2 interface are a full order of magnitude stronger than such interactions involving silicon dangling bonds defects (E & PRIME; centers) within the oxide, the NZFMR results strongly suggest a response dominated by Si/SiO2 interface trap defects. With the introduction of H-1 magnetic nuclei to the interface after a forming gas anneal, linewidths and lines shapes of Si/SiO2 and Si-28/(SiO2)-Si-28 MIS capacitors were nearly identical. However, the amplitude of the NZFMR response is greatly reduced by the introduction of hydrogen by a fraction about equal to the reduction in the interface trap density. Our results further indicate that the rate limiting step in trap-assisted tunneling is the interface to oxide trapping event.

Physical Sciences

Physics

Physics, Applied

Science & Technology

Details

Title: Subtitle: Effects of Si-29 and H-1 on the near-zero field magnetoresistance response of Si/SiO2 interface states: Implications for oxide tunneling currents
Creators: Elias B. Frantz - Intel (United States)
David J. Michalak - Intel (United States)
Nicholas J. Harmon - Coastal Carolina University
Eric M. Henry - Intel Corp, Intel Components Res, Hillsboro, OR 97124 USA
Michael E. Flatte - University of Iowa
Sean W. King - Intel (United States)
James S. Clarke - Intel (United States)
Patrick M. Lenahan - Pennsylvania State University
Resource Type: Journal article
Publication Details: Applied physics letters, Vol.119(18), 184101
DOI: 10.1063/5.0066640
ISSN: 0003-6951
eISSN: 1077-3118
Publisher: AIP Publishing
Number of pages: 5
Grant note: HDTRA1-18-0012 / Defense Threat Reduction Agency (DTRA); United States Department of Defense; Defense Threat Reduction Agency Intel Global Supply Chain internship program
Language: English
Date published: 11/01/2021
Academic Unit: Electrical and Computer Engineering; Physics and Astronomy
Record Identifier: 9984428788902771

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