Journal article
Effects of impurity scattering on electron-phonon resonances in semiconductor superlattice high-field transport
Physical review. B, Vol.68(8), pp.85307-1-85307-8
08/12/2003
DOI: 10.1103/PhysRevB.68.085307
Abstract
A non-equilibrium Green's function method is applied to model high-field quantum transport and electron-phonon resonances in semiconductor superlattices. The field-dependent density of states for elastic (impurity) scattering is found non-perturbatively in an approach which can be applied to both high and low electric fields. I-V curves, and specifically electron-phonon resonances, are calculated by treating the inelastic (LO phonon) scattering perturbatively. Calculations show how strong impurity scattering suppresses the electron-phonon resonance peaks in I-V curves, and their detailed sensitivity to the size, strength and concentration of impurities.
Details
- Title: Subtitle
- Effects of impurity scattering on electron-phonon resonances in semiconductor superlattice high-field transport
- Creators
- Shaoxin Feng - University of IowaChristoph H Grein - University of Illinois ChicagoMichael E Flatte - University of Iowa
- Resource Type
- Journal article
- Publication Details
- Physical review. B, Vol.68(8), pp.85307-1-85307-8
- DOI
- 10.1103/PhysRevB.68.085307
- ISSN
- 0163-1829
- eISSN
- 1095-3795
- Language
- English
- Date published
- 08/12/2003
- Academic Unit
- Electrical and Computer Engineering; Physics and Astronomy
- Record Identifier
- 9984428814402771
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