Journal article
Effects of layer thickness and alloy composition on carrier lifetimes in mid-wave infrared InAs/InAsSb superlattices
Applied physics letters, Vol.105(2), 022107
07/14/2014
DOI: 10.1063/1.4890578
Abstract
Measurements of carrier recombination rates using a time-resolved pump-probe technique are reported for mid-wave infrared InAs/InAs1−xSbx type-2 superlattices (T2SLs). By engineering the layer widths and alloy compositions, a 16 K band-gap of ≃235 ± 10 meV was achieved for all five unintentionally doped T2SLs. Carrier lifetimes were determined by fitting a rate equation model to the density dependent data. Minority carrier lifetimes as long as 10 μs were measured. On the other hand, the Auger rates for all the InAs/InAsSb T2SLs were significantly larger than those previously measured for InAs/GaSb T2SLs. The minority carrier and Auger lifetimes were observed to generally increase with increasing antimony content and decreasing layer thickness.
Details
- Title: Subtitle
- Effects of layer thickness and alloy composition on carrier lifetimes in mid-wave infrared InAs/InAsSb superlattices
- Creators
- Y Aytac - University of IowaB. V Olson - Sandia National LaboratoriesJ. K Kim - Sandia National LaboratoriesE. A Shaner - Sandia National LaboratoriesS. D Hawkins - Sandia National LaboratoriesJ. F Klem - Sandia National LaboratoriesM. E Flatté - University of IowaT. F Boggess - University of Iowa
- Resource Type
- Journal article
- Publication Details
- Applied physics letters, Vol.105(2), 022107
- DOI
- 10.1063/1.4890578
- ISSN
- 0003-6951
- eISSN
- 1077-3118
- Grant note
- DOI: 10.13039/100000015, name: U.S. Department of Energy, award: DE-AC04-94AL85000
- Language
- English
- Date published
- 07/14/2014
- Academic Unit
- Electrical and Computer Engineering; Physics and Astronomy
- Record Identifier
- 9984199845602771
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