Journal article
Eight-band calculations of strained InAs/GaAs quantum dots compared with one, four, and six-band approximations
Physical review. B, Condensed matter, Vol.57(12), pp.7190-7195
03/15/1998
DOI: 10.1103/PhysRevB.57.7190
Abstract
The electronic structure of pyramidal shaped InAs/GaAs quantum dots is calculated using an eight-band strain dependent $\bf k\cdot p$ Hamiltonian. The influence of strain on band energies and the conduction-band effective mass are examined. Single particle bound-state energies and exciton binding energies are computed as functions of island size. The eight-band results are compared with those for one, four and six bands, and with results from a one-band approximation in which m(r) is determined by the local value of the strain. The eight-band model predicts a lower ground state energy and a larger number of excited states than the other approximations.
Details
- Title: Subtitle
- Eight-band calculations of strained InAs/GaAs quantum dots compared with one, four, and six-band approximations
- Creators
- Craig Pryor - Lund University
- Resource Type
- Journal article
- Publication Details
- Physical review. B, Condensed matter, Vol.57(12), pp.7190-7195
- DOI
- 10.1103/PhysRevB.57.7190
- NLM abbreviation
- Phys Rev B Condens Matter
- ISSN
- 0163-1829
- eISSN
- 1095-3795
- Publisher
- American Physical Society
- Language
- English
- Date published
- 03/15/1998
- Academic Unit
- Physics and Astronomy
- Record Identifier
- 9984429036002771
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