Journal article
Electric-Field Control of a Hydrogenic Donor's Spin in a Semiconductor
Physical review letters, Vol.102(1), pp.017603-017603
01/09/2009
DOI: 10.1103/PhysRevLett.102.017603
PMID: 19257242
Abstract
An ac electric field applied to a single donor-bound electron in a semiconductor modulates the orbital character of its wave function, which affects the electron's spin dynamics via the spin-orbit interaction. Numerical calculations of the spin dynamics of a single hydrogenic donor (Si) embedded in GaAs, using a real-space multiband k center dot p formalism, show the high symmetry of the hydrogenic donor state results in strongly nonlinear dependences of the electronic g tensor on applied fields. A nontrivial consequence is that the most rapid Rabi oscillations occur for electric fields modulated at a subharmonic of the Larmor frequency.
Details
- Title: Subtitle
- Electric-Field Control of a Hydrogenic Donor's Spin in a Semiconductor
- Creators
- A. De - Univ Iowa, Dept Phys & Astron, Iowa City, IA 52242 USACraig E. Pryor - University of IowaMichael E. Flatte - University of Iowa
- Resource Type
- Journal article
- Publication Details
- Physical review letters, Vol.102(1), pp.017603-017603
- DOI
- 10.1103/PhysRevLett.102.017603
- PMID
- 19257242
- NLM abbreviation
- Phys Rev Lett
- ISSN
- 0031-9007
- eISSN
- 1079-7114
- Publisher
- Amer Physical Soc
- Number of pages
- 4
- Language
- English
- Date published
- 01/09/2009
- Academic Unit
- Electrical and Computer Engineering; Physics and Astronomy
- Record Identifier
- 9984429059802771
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