Journal article
Electric field dependence of spin coherence in (001) GaAs/AlxGa1-xAs quantum wells
Physical review. B, Condensed matter and materials physics, Vol.72(16), pp.161311.1-161311.4
10/15/2005
DOI: 10.1103/PhysRevB.72.161311
Abstract
Conduction electron spin lifetimes (T1) and spin coherence times (T2) are strongly modified in semiconductor quantum wells by electric fields. Quantitative calculations in GaAs/AlGaAs quantum wells at room temperature show roughly a factor of 4 enhancement in the spin lifetimes at optimal values of the electric fields. The much smaller enhancement compared to previous calculations is due to overestimates of the zero-field spin lifetime and the importance of nonlinear effects. © 2005 The American Physical Society.
Details
- Title: Subtitle
- Electric field dependence of spin coherence in (001) GaAs/AlxGa1-xAs quantum wells
- Creators
- Wayne H Lau - University of California, Santa BarbaraMichael E Flatte - University of Iowa
- Resource Type
- Journal article
- Publication Details
- Physical review. B, Condensed matter and materials physics, Vol.72(16), pp.161311.1-161311.4
- DOI
- 10.1103/PhysRevB.72.161311
- ISSN
- 1098-0121
- eISSN
- 1550-235X
- Publisher
- American Physical Society
- Language
- English
- Date published
- 10/15/2005
- Academic Unit
- Electrical and Computer Engineering; Physics and Astronomy
- Record Identifier
- 9984428821302771
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