Journal article
Electric-field dependent spin diffusion and spin injection into semiconductors
Physical review. B, Vol.66(20), pp.2012021-2012024
01/23/2002
DOI: 10.1103/PhysRevB.66.201202
Abstract
We derive a drift-diffusion equation for spin polarization in semiconductors by consistently taking into account electric-field effects and nondegenerate electron statistics. We identify a high electric-field diffusive regime which has no analog in metals. In this regime there are two distinct spin-diffusion lengths. Furthermore, spin injection from a ferromagnetic metal into a semiconductor is enhanced by several orders of magnitude. This enhancement also occurs for high electric-field spin injection through a spin-selective interfacial barrier.
Details
- Title: Subtitle
- Electric-field dependent spin diffusion and spin injection into semiconductors
- Creators
- Z G Yu - University of IowaM E Flatte - University of Iowa
- Resource Type
- Journal article
- Publication Details
- Physical review. B, Vol.66(20), pp.2012021-2012024
- DOI
- 10.1103/PhysRevB.66.201202
- ISSN
- 2469-9950
- eISSN
- 2469-9969
- Publisher
- Amer Physical Soc
- Number of pages
- 4
- Language
- English
- Date published
- 01/23/2002
- Academic Unit
- Electrical and Computer Engineering; Physics and Astronomy
- Record Identifier
- 9984428682202771
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