Journal article
Electric-field manipulation of the Landégtensor of a hole in an In0.5Ga0.5As/GaAs self-assembled quantum dot
Physical review. B, Condensed matter and materials physics, Vol.84(19), 195403
11/2011
DOI: 10.1103/PhysRevB.84.195403
Abstract
The effect of an electric field on spin precession of a hole in an In0.5Ga0.5As/GaAs self-assembled quantum dot is calculated using multiband real-space envelope-function theory. The dependence of the Landé g tensor on electric fields should permit high-frequency g-tensor modulation resonance, as well as direct, nonresonant electric-field control of the hole spin. Subharmonic resonances have also been found in g-tensor modulation resonance of the hole, due to the strong quadratic dependence of components of the hole g tensor on the electric field...
Details
- Title: Subtitle
- Electric-field manipulation of the Landégtensor of a hole in an In0.5Ga0.5As/GaAs self-assembled quantum dot
- Creators
- Joseph Pingenot - University of OklahomaCraig E Pryor - University of IowaMichael E Flatté - University of Iowa
- Resource Type
- Journal article
- Publication Details
- Physical review. B, Condensed matter and materials physics, Vol.84(19), 195403
- DOI
- 10.1103/PhysRevB.84.195403
- NLM abbreviation
- Phys Rev B Condens Matter Mater Phys
- ISSN
- 1098-0121
- eISSN
- 1550-235X
- Publisher
- American Physical Society
- Language
- English
- Date published
- 11/2011
- Academic Unit
- Electrical and Computer Engineering; Physics and Astronomy
- Record Identifier
- 9984199942002771
Metrics
13 Record Views