Journal article
Electrical manipulation of an electronic two-state system in Ge quantum dots
Applied physics letters, Vol.95(23), p.232103
12/07/2009
DOI: 10.1063/1.3266864
Abstract
We calculate that the electronic states of strained self-assembled germanium quantum dots embedded in silicon provide a convenient two-state system for electrical control. An electronic state localized at the apex of the quantum dot is nearly degenerate with a state localized at the base of the quantum dot. Small electric fields shift the electronic ground state from apex-localized to base-localized, which permits sensitive tuning of the electronic, optical, and magnetic properties of the dot. As one example, we describe how spin-spin coupling between two germanium quantum dots can be controlled very sensitively by shifting the individual dot's electronic ground state between apex and base. (C) 2009 American Institute of Physics. [doi: 10.1063/1.3266864]
Details
- Title: Subtitle
- Electrical manipulation of an electronic two-state system in Ge quantum dots
- Creators
- C. E. Pryor - University of IowaM. E. Flatte - University of IowaJ. Levy - University of Pittsburgh
- Resource Type
- Journal article
- Publication Details
- Applied physics letters, Vol.95(23), p.232103
- DOI
- 10.1063/1.3266864
- ISSN
- 0003-6951
- eISSN
- 1077-3118
- Publisher
- Amer Inst Physics
- Number of pages
- 3
- Grant note
- DE-FG02-07ER46421 / DOE BES; United States Department of Energy (DOE) N00014-06-10428 / ONR MURI; MURI; Office of Naval Research CCF-0507295 / NSF NIRT; National Science Foundation (NSF) DAAD19-01-0490 / DARPA/ARO; United States Department of Defense; Defense Advanced Research Projects Agency (DARPA)
- Language
- English
- Date published
- 12/07/2009
- Academic Unit
- Electrical and Computer Engineering; Physics and Astronomy
- Record Identifier
- 9984428669502771
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