Journal article
Electron accumulation in single InP quantum dots observed by photoluminescence
Physical review. B, Condensed matter, Vol.64(23), pp.2333081-2333084
12/15/2001
DOI: 10.1103/PhysRevB.64.233308
Abstract
Single quantum-dot spectroscopy has revealed characteristic but so far unexplained differences in the optical spectra from different quantum-dot systems. We propose a size-dependent accumulation of carriers as the dominant mechanism behind these differences. We support our hypothesis with photoluminescence spectroscopy on single InP/GaInP quantum dots positioned below a transparent Schottky gate. We show that without external bias, the dots are filled with 15–20 electrons. By applying a reverse bias, we are able to reduce the electron accumulation while monitoring the evolution of the emission spectrum. We find that the emission peaks disappear one by one until, at a sufficiently low number of electrons in the dot, the remaining broad peaks are replaced by numerous very sharp peaks. © 2001 The American Physical Society.
Details
- Title: Subtitle
- Electron accumulation in single InP quantum dots observed by photoluminescence
- Creators
- Dan Hessman - Lund UniversityJonas Persson - Lund UniversityMats-Erik Pistol - Lund UniversityCraig Pryor - Lund UniversityLars Samuelson - Lund University
- Resource Type
- Journal article
- Publication Details
- Physical review. B, Condensed matter, Vol.64(23), pp.2333081-2333084
- DOI
- 10.1103/PhysRevB.64.233308
- ISSN
- 0163-1829
- eISSN
- 1095-3795
- Language
- English
- Date published
- 12/15/2001
- Academic Unit
- Physics and Astronomy
- Record Identifier
- 9984429042102771
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