Journal article
Electron and hole spin dynamics in semiconductor quantum dots
Applied physics letters, Vol.86(11), pp.113111-113111-3
03/14/2005
DOI: 10.1063/1.1857067
Abstract
We report direct measurement of the spin dynamics of electrons and holes in self-assembled InAs quantum dots (QDs) through polarization-sensitive time-resolved photoluminescence experiments on modulation-doped quantum dot heterostructures. Our measured hole spin decay time is considerably longer than in bulk and quantum well semiconductor systems, indicating that the removal of near degenerate hole states with different spin quantization axes through three-dimensional confinement slows hole spin relaxation in semiconductors. The electron and hole spin decay times we observe (electrons:
120
ps
; holes:
29
ps
) are consistent with spin relaxation via phonon-mediated virtual scattering between the lowest two confined levels in the QDs, which have a mixed spin character due to the spin-orbit interaction.
Details
- Title: Subtitle
- Electron and hole spin dynamics in semiconductor quantum dots
- Creators
- K Gündoğdu - University of IowaK Hall - University of IowaE Koerperick - University of IowaC Pryor - University of IowaM Flatté - University of IowaThomas Boggess - University of IowaO Shchekin - The University of Texas at AustinD Deppe - The University of Texas at Austin
- Resource Type
- Journal article
- Publication Details
- Applied physics letters, Vol.86(11), pp.113111-113111-3
- Publisher
- American Institute of Physics
- DOI
- 10.1063/1.1857067
- ISSN
- 0003-6951
- eISSN
- 1077-3118
- Language
- English
- Date published
- 03/14/2005
- Academic Unit
- Electrical and Computer Engineering; Physics and Astronomy
- Record Identifier
- 9984428800902771
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