Journal article
Electron-spin decoherence in bulk and quantum-well zinc-blende semiconductors
Physical review. B, Condensed matter, Vol.64(16), pp.1613011-1613014
10/15/2001
DOI: 10.1103/PhysRevB.64.161301
Abstract
A theory for longitudinal (formula presented) and transverse (formula presented) electron spin coherence times in zinc-blende semiconductor quantum wells is developed based on a nonperturbative nanostructure model solved in a fourteen-band restricted basis set. Distinctly different dependences of coherence times on mobility, quantization energy, and temperature are found from previous calculations. Quantitative agreement between our calculations and measurements is found for GaAs/AlGaAs, InGaAs/InP, and GaSb/AlSb quantum wells. © 2001 The American Physical Society.
Details
- Title: Subtitle
- Electron-spin decoherence in bulk and quantum-well zinc-blende semiconductors
- Creators
- Wayne H. LauJ. T. Olesberg - University of IowaMichael E. Flatté - University of Iowa
- Resource Type
- Journal article
- Publication Details
- Physical review. B, Condensed matter, Vol.64(16), pp.1613011-1613014
- DOI
- 10.1103/PhysRevB.64.161301
- NLM abbreviation
- Phys Rev B Condens Matter
- ISSN
- 0163-1829
- eISSN
- 1095-3795
- Publisher
- American Physical Society
- Language
- English
- Date published
- 10/15/2001
- Academic Unit
- Electrical and Computer Engineering; Physics and Astronomy
- Record Identifier
- 9984428792502771
Metrics
6 Record Views