Journal article
Electronic structure of strained I n P / G a 0.51 In 0.49 P quantum dots
Physical review. B, Condensed matter, Vol.56(16), pp.10404-10411
10/1997
DOI: 10.1103/PhysRevB.56.10404
Abstract
We calculate the electronic structure of nm scale InP islands embedded in (Formula presented). The calculations are done in the envelope approximation and include the effects of strain, piezoelectric polarization, and mixing among 6 valence bands. The electrons are confined within the entire island, while the holes are confined to strain induced pockets. One pocket forms a ring at the bottom of the island near the substrate interface, while the other is above the island in the GaInP. The two sets of hole states are decoupled. Polarization dependent dipole matrix elements are calculated for both types of hole states. © 1997 The American Physical Society.
Details
- Title: Subtitle
- Electronic structure of strained I n P / G a 0.51 In 0.49 P quantum dots
- Creators
- Craig Pryor - Lund UniversityM-E. Pistol - Lund UniversityL. Samuelson - Lund University
- Resource Type
- Journal article
- Publication Details
- Physical review. B, Condensed matter, Vol.56(16), pp.10404-10411
- DOI
- 10.1103/PhysRevB.56.10404
- NLM abbreviation
- Phys Rev B Condens Matter
- ISSN
- 0163-1829
- eISSN
- 1095-3795
- Publisher
- American Physical Society
- Language
- English
- Date published
- 10/1997
- Academic Unit
- Physics and Astronomy
- Record Identifier
- 9984428770902771
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