Journal article
Er Diffusion and Er-Induced Ga-Al Interdiffusion in GaAs/AlGaAs Quantum Structures
Materials science forum, Vol.258-263(9993), pp.1701-1706
01/01/1997
DOI: 10.4028/www.scientific.net/MSF.258-263.1701
Abstract
It is shown that the introduction of erbium in GaAs/AlGaAs quantum well structures in the process of growth by MBE leads to efficient interdiffusion of Ga and Al and diffusion of Er due to impurity-enhanced formation of cation vacancies. A mechanism of cation vacancies formation is proposed based on local strain induced by introduction of erbium. We have demonstrated also that erbium interacts with aluminum in arsenides. This interaction can be responsible for the formation of Er-containing Al-enriched clusters.
Details
- Title: Subtitle
- Er Diffusion and Er-Induced Ga-Al Interdiffusion in GaAs/AlGaAs Quantum Structures
- Creators
- M.S. Bresler - Russian Academy of SciencesB.Ya Ber - Physico-Technical InstituteOleg B. Gusev - Physico-Technical InstituteE.K. Lindmark - University of ArizonaJ.P. Prineas - University of ArizonaH.M. Gibbs - University of ArizonaG. Khitrova - Optical SciencesV.F. Masterov - Peter the Great St. Petersburg Polytechnic UniversityI.N. Yassievich - Physico-Technical InstituteB.P. Zakharchenya - Physico-Technical Institute
- Resource Type
- Journal article
- Publication Details
- Materials science forum, Vol.258-263(9993), pp.1701-1706
- DOI
- 10.4028/www.scientific.net/MSF.258-263.1701
- ISSN
- 1662-9752
- eISSN
- 1662-9752
- Language
- English
- Date published
- 01/01/1997
- Academic Unit
- Physics and Astronomy
- Record Identifier
- 9984428773402771
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