Journal article
Estimates of Impact Ionization Coefficients in Superlattice-Based Mid-Wavelength Infrared Avalanche Photodiodes
MRS proceedings, Vol.799, pp.153-160
2003
DOI: 10.1557/PROC-799-Z3.1
Abstract
We describe band engineering strategies to either enhance or suppress electron-initiated impact ionization relative to hole-initiated impact ionization in type II superlattice mid-wavelength infrared avalanche photodiodes. The strategy to enhance electron-initiated impact ionization involves placing a high density of states at approximately one energy gap above the bottom of the conduction band and simultaneously removing valence band states from the vicinity of one energy gap below the top of the valence band. This gives the electrons a low threshold energy and the holes a high one. The opposite strategy enhances hole-initiated impact ionization. Estimates of the electron (α) and hole (β) impact ionization coefficients predict that α/β>>1 in the first type of superlattice and α/β<<1 in the second type.
Details
- Title: Subtitle
- Estimates of Impact Ionization Coefficients in Superlattice-Based Mid-Wavelength Infrared Avalanche Photodiodes
- Creators
- C. H. Grein - University of Illinois ChicagoK. Abu El-Rub - Jordan University of Science and TechnologyM. E. Flatté - University of IowaH. Ehrenreich - Harvard University
- Contributors
- F.D. Auret (Editor)I. Buyanova (Editor)D. Friedman (Editor)M.O. Manasreh (Editor)A. Munkholm (Editor)
- Resource Type
- Journal article
- Publication Details
- MRS proceedings, Vol.799, pp.153-160
- DOI
- 10.1557/PROC-799-Z3.1
- ISSN
- 0272-9172
- eISSN
- 1946-4274
- Publisher
- Cambridge University Press
- Number of pages
- 8
- Language
- English
- Date published
- 2003
- Academic Unit
- Electrical and Computer Engineering; Physics and Astronomy
- Record Identifier
- 9984428781102771
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