Journal article
Ferromagnetic Resonance Spin Pumping and Electrical Spin Injection in Silicon-Based Metal-Oxide-Semiconductor Heterostructures
Physical review letters, Vol.115(24), pp.246602-246602
12/11/2015
DOI: 10.1103/PhysRevLett.115.246602
PMID: 26705647
Abstract
We present the measurement of ferromagnetic resonance (FMR-)driven spin pumping and three-terminal electrical spin injection within the same silicon-based device. Both effects manifest in a dc spin accumulation voltage V_{s} that is suppressed as an applied field is rotated to the out-of-plane direction, i.e., the oblique Hanle geometry. Comparison of V_{s} between these two spin injection mechanisms reveals an anomalously strong suppression of FMR-driven spin pumping with increasing out-of-plane field H_{app}^{z}. We propose that the presence of the large ac component to the spin current generated by the spin pumping approach, expected to exceed the dc value by 2 orders of magnitude, is the origin of this discrepancy through its influence on the spin dynamics at the oxide-silicon interface. This convolution, wherein the dynamics of both the injector and the interface play a significant role in the spin accumulation, represents a new regime for spin injection that is not well described by existing models of either FMR-driven spin pumping or electrical spin injection.
Details
- Title: Subtitle
- Ferromagnetic Resonance Spin Pumping and Electrical Spin Injection in Silicon-Based Metal-Oxide-Semiconductor Heterostructures
- Creators
- Y Pu - The Ohio State UniversityP M Odenthal - University of California, RiversideR Adur - The Ohio State UniversityJ Beardsley - The Ohio State UniversityA G Swartz - University of California, RiversideD V Pelekhov - The Ohio State UniversityM E Flatté - University of IowaR K Kawakami - University of California, RiversideJ Pelz - The Ohio State UniversityP C Hammel - The Ohio State UniversityE Johnston-Halperin - The Ohio State University
- Resource Type
- Journal article
- Publication Details
- Physical review letters, Vol.115(24), pp.246602-246602
- DOI
- 10.1103/PhysRevLett.115.246602
- PMID
- 26705647
- ISSN
- 0031-9007
- eISSN
- 1079-7114
- Grant note
- DOI: 10.13039/100000001, name: National Science Foundation, award: DMR-1420451; DOI: 10.13039/100000015, name: U.S. Department of Energy, award: DE-FG02-03ER46054, DE-SC0001304; DOI: 10.13039/100006928, name: Ohio State University
- Language
- English
- Date published
- 12/11/2015
- Academic Unit
- Electrical and Computer Engineering; Physics and Astronomy
- Record Identifier
- 9984199673302771
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