Journal article
Flip Chip Bonding of 68 68 MWIR LED Arrays
IEEE transactions on electronics packaging manufacturing, Vol.32(1), pp.9-13
01/01/2009
DOI: 10.1109/TEPM.2008.2005062
Abstract
The flip chip bonding process is optimized by varying the bonding pressure, temperature, and time. The 68times68 mid wave infrared (MWIR) LED array was hybridized onto Si-CMOS driver array with same number of pixels. Each pixel has two indium bumps, one for cathode and another for anode. Both LED array and CMOS drivers have 15-mum-square Indium bump contact pads. We used Karl Suss FC150 flip chip machine for bonding of CMOS driver array onto LED array. From the LED current-voltage characteristics, it is concluded that the optimized flip chip bonding process results in uniform contact and very low contact resistance. Both electrical and optical characteristics of LED array after flip chip bonding are presented.
Details
- Title: Subtitle
- Flip Chip Bonding of 68 68 MWIR LED Arrays
- Creators
- N C Das - DEVCOM Army Research LaboratoryM Taysing-LaraK A Olver - DEVCOM Army Research LaboratoryF Kiamilev - University of DelawareJ P Prineas - University of IowaJ T Olesberg - University of IowaE J Koerperick - University of IowaL M Murray - University of IowaT F Boggess - University of Iowa
- Resource Type
- Journal article
- Publication Details
- IEEE transactions on electronics packaging manufacturing, Vol.32(1), pp.9-13
- DOI
- 10.1109/TEPM.2008.2005062
- ISSN
- 1521-334X
- eISSN
- 1558-0822
- Language
- English
- Date published
- 01/01/2009
- Academic Unit
- Physics and Astronomy
- Record Identifier
- 9984199731602771
Metrics
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