Journal article
Geometry and material parameter dependence of InAs/GaAs quantum dot electronic structure
Physical review. B, Condensed matter, Vol.60(4), pp.2869-2874
07/15/1999
DOI: 10.1103/PhysRevB.60.2869
Abstract
We examine the effects of island geometry and material parameters on confined state energies of an InAs/GaAs pyramidal quantum dot calculated using a strain-dependent eight-band πβ
π Hamiltonian. For a truncated pyramidal dot with 101-type sides the electronic confined state energies depend strongly on the base of the pyramid, but are insensitive to the height. The exciton recombination energy is primarily determined by the island volume. This apparent paradox is explained by the change in strain profile with shape, and the fact that truncating a pyramid has a small effect on the volume. For a typical island size, we compute the sensitivity of the electron and hole ground-state energies to variations in 17 different material parameters. The most critical parameters are the InAs Luttinger parameters, πΎ1 and πΎ3 for which a 1β’0% shift in either one changes the recombination energy by 20βmeV.
Details
- Title: Subtitle
- Geometry and material parameter dependence of InAs/GaAs quantum dot electronic structure
- Creators
- Craig Pryor - Prysmian Group (United States)
- Resource Type
- Journal article
- Publication Details
- Physical review. B, Condensed matter, Vol.60(4), pp.2869-2874
- DOI
- 10.1103/PhysRevB.60.2869
- NLM abbreviation
- Phys Rev B Condens Matter
- ISSN
- 0163-1829
- eISSN
- 1095-3795
- Publisher
- American Physical Society
- Language
- English
- Date published
- 07/15/1999
- Academic Unit
- Physics and Astronomy
- Record Identifier
- 9984429025102771
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