Journal article
Growth and optical properties of self-assembled InGaAs Quantum Posts
Physica. E, Low-dimensional systems & nanostructures, Vol.40(6), pp.1785-1789
04/01/2008
DOI: 10.1016/j.physe.2007.09.165
Abstract
We demonstrate a method to grow height controlled, dislocation-free InGaAs quantum posts (QPs) on GaAs by molecular beam epitaxy (MBE) which is confirmed by structural investigations. The optical properties are compared to realistic 8-band k.p calculations of the electronic structure which fully account for strain and the structural properties of the QP. Using QPs embedded in n-i-p junctions we find wide range tunability of the interband spectrum and giant static dipole moments.
Details
- Title: Subtitle
- Growth and optical properties of self-assembled InGaAs Quantum Posts
- Creators
- Hubert J. Krenner - University of California, Santa BarbaraCraig E. Pryor - University of IowaJun He - University of California, Santa BarbaraJ. P. Zhang - University of California, Santa BarbaraY. Wu - University of California, Santa BarbaraC. M. Morris - University of California, Santa BarbaraM. S. Sherwin - University of California, Santa BarbaraPierre M. Petroff - University of California, Santa Barbara
- Resource Type
- Journal article
- Publication Details
- Physica. E, Low-dimensional systems & nanostructures, Vol.40(6), pp.1785-1789
- DOI
- 10.1016/j.physe.2007.09.165
- ISSN
- 1386-9477
- eISSN
- 1873-1759
- Grant note
- 0507295 / National Science Foundation (nsf_________::NSF)
- Language
- English
- Date published
- 04/01/2008
- Academic Unit
- Physics and Astronomy
- Record Identifier
- 9984429023802771
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