Journal article
High detectivity InGaAsSb pin infrared photodetector for blood glucose sensing
Electronics letters, Vol.36(15), pp.1301-1303
07/20/2000
DOI: 10.1049/el:20000956
Abstract
A molecular beam epitaxy grown GalnAsSb pin photodetector lattice matched to a GaSb substrate is reported. The mesa type detector has high responsivity in the 1.4 to 2.4 mu m wavelength range with -0.3V bias, 40 mu A dark current for a 1mm diameter detector and the highest detectivity D* of 2.6 x 10(10)cm.Hz(1/2)/W reported for a GaInAsSb detector. The measured responsivity compares well with k.p calculations.
Details
- Title: Subtitle
- High detectivity InGaAsSb pin infrared photodetector for blood glucose sensing
- Creators
- B L CarterE Shaw - University of IowaJ T Olesberg - University of IowaW K ChanT C Hasenberg - University of IowaM E Flatte - University of Iowa
- Resource Type
- Journal article
- Publication Details
- Electronics letters, Vol.36(15), pp.1301-1303
- Publisher
- IEE-INST ELEC ENG
- DOI
- 10.1049/el:20000956
- ISSN
- 0013-5194
- eISSN
- 1350-911X
- Number of pages
- 3
- Language
- English
- Date published
- 07/20/2000
- Academic Unit
- Physics and Astronomy; Electrical and Computer Engineering
- Record Identifier
- 9984429025002771
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