Journal article
High power cascaded mid-infrared InAs/GaSb light emitting diodes on mismatched GaAs
Journal of applied physics, Vol.118(12), p.123108
09/28/2015
DOI: 10.1063/1.4931914
Abstract
InAs/GaSb mid-wave, cascaded superlattice light emitting diodes are found to give higher radiance when epitaxially grown on mismatched GaAs substrates compared to lattice-matched GaSb substrates. Peak radiances of 0.69 W/cm2-sr and 1.06 W/cm2-sr for the 100 × 100 μm2 GaSb and GaAs-based devices, respectively, were measured at 77 K. Measurement of the recombination coefficients shows the shorter Shockley-Read-Hall recombination lifetime as misfit dislocations for growth on GaAs degrade the quantum efficiency only at low current injection. The improved performance on GaAs was found to be due to the higher transparency and improved thermal properties of the GaAs substrate.
Details
- Title: Subtitle
- High power cascaded mid-infrared InAs/GaSb light emitting diodes on mismatched GaAs
- Creators
- S. R Provence - University of IowaR Ricker - University of IowaY Aytac - University of IowaT. F Boggess - University of IowaJ. P Prineas - University of Iowa
- Resource Type
- Journal article
- Publication Details
- Journal of applied physics, Vol.118(12), p.123108
- DOI
- 10.1063/1.4931914
- ISSN
- 0021-8979
- eISSN
- 1089-7550
- Grant note
- DOI: 10.13039/100005712, name: Missile Defense Agency, award: HQ0147-14-C-7811
- Language
- English
- Date published
- 09/28/2015
- Academic Unit
- Physics and Astronomy
- Record Identifier
- 9984199933302771
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