Journal article
High temperature gate control of quantum well spin memory
Physical review letters, Vol.91(24), 246601
12/10/2003
DOI: 10.1103/PhysRevLett.91.246601
PMID: 14683140
Abstract
Time-resolved optical measurements in (110)-oriented GaAs/AlGaAs quantum wells show a ten-fold increase of the spin-relaxation rate as a function of applied electric field from 20 to 80 kV cm-1 at 170 K and indicate a similar variation at 300 K, in agreement with calculations based on the Rashba effect. Spin relaxation is almost field-independent below 20 kV cm-1 reflecting quantum well interface asymmetry. The results indicate the achievability of voltage-gateable spin-memory time longer than 3 ns simultaneously with high electron mobility.
Details
- Title: Subtitle
- High temperature gate control of quantum well spin memory
- Creators
- O. Z Karimov - University of SouthamptonG. H John - University of SouthamptonR. T HarleyW. H LauM. E Flatte - University of IowaM Henini - University of NottinghamR Airey - University of Sheffield
- Resource Type
- Journal article
- Publication Details
- Physical review letters, Vol.91(24), 246601
- DOI
- 10.1103/PhysRevLett.91.246601
- PMID
- 14683140
- NLM abbreviation
- Phys Rev Lett
- ISSN
- 0031-9007
- eISSN
- 1079-7114
- Publisher
- American Physical Society
- Language
- English
- Date published
- 12/10/2003
- Academic Unit
- Electrical and Computer Engineering; Physics and Astronomy
- Record Identifier
- 9984428666702771
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