Journal article
Highly efficient, spectrally pure 340 nm ultraviolet emission from AlxGa1-xN nanowire based light emitting diodes
Nanotechnology, Vol.24(34), pp.345201-345201
08/30/2013
DOI: 10.1088/0957-4484/24/34/345201
PMID: 23899873
Abstract
High crystal quality, vertically aligned AlxGa1-xN nanowire based double heterojunction light emitting diodes (LEDs) are grown on Si substrate by molecular beam epitaxy. Such AlxGa1-xN nanowires exhibit unique core-shell structures, which can significantly suppress surface nonradiative recombination. We successfully demonstrate highly efficient AlxGa1-xN nanowire array based LEDs operating at similar to 340 nm. Such nanowire devices exhibit superior electrical and optical performance, including an internal quantum efficiency of similar to 59% at room temperature, a relatively small series resistance, highly stable emission characteristics, and the absence of efficiency droop under pulsed biasing conditions.
Details
- Title: Subtitle
- Highly efficient, spectrally pure 340 nm ultraviolet emission from AlxGa1-xN nanowire based light emitting diodes
- Creators
- Q. Wang - McGill UniversityA. T. Connie - McGill UniversityH. P. T. Nguyen - McGill UniversityM. G. Kibria - McGill UniversityS. Zhao - McGill UniversityS. Sharif - McGill UniversityI. Shih - McGill UniversityZ. Mi - McGill University
- Resource Type
- Journal article
- Publication Details
- Nanotechnology, Vol.24(34), pp.345201-345201
- Publisher
- Iop Publishing Ltd
- DOI
- 10.1088/0957-4484/24/34/345201
- PMID
- 23899873
- ISSN
- 0957-4484
- eISSN
- 1361-6528
- Number of pages
- 6
- Grant note
- Natural Sciences and Engineering Research Council (NSERC); Natural Sciences and Engineering Research Council of Canada (NSERC)
- Language
- English
- Date published
- 08/30/2013
- Academic Unit
- Hematology, Oncology, and Blood & Marrow Transplantation; Internal Medicine
- Record Identifier
- 9984359780102771
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