Journal article
Hole spin relaxation in neutral InGaAs quantum dots: Decay to dark states
Applied physics letters, Vol.90(5), pp.053109-053109-3
02/01/2007
DOI: 10.1063/1.2437063
Abstract
The authors report measurements of hole spin relaxation in neutral InGaAs quantum dots using polarization-dependent time-resolved photoluminescence experiments. The single-particle hole spin relaxation was isolated from other spin flip processes in the electron-hole system by detecting the initial transfer of population from optically active to dark states. The results indicate that electron-hole exchange interactions play a negligible role in the carrier spin kinetics, and are consistent with a mechanism of hole spin relaxation via phonon-mediated virtual scattering between confined quantum dot states.
Details
- Title: Subtitle
- Hole spin relaxation in neutral InGaAs quantum dots: Decay to dark states
- Creators
- K Hall - Dalhousie UniversityE Koerperick - University of IowaThomas Boggess - University of IowaO Shchekin - The University of Texas at AustinD Deppe - The University of Texas at Austin
- Resource Type
- Journal article
- Publication Details
- Applied physics letters, Vol.90(5), pp.053109-053109-3
- DOI
- 10.1063/1.2437063
- ISSN
- 0003-6951
- eISSN
- 1077-3118
- Publisher
- American Institute of Physics
- Grant note
- ECS-0322021 / NSF NSERC MDA972-01-C-0002 / DARPA
- Date published
- 02/01/2007
- Academic Unit
- Physics and Astronomy
- Record Identifier
- 9984199711502771
Metrics
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