Journal article
Hot carrier dynamics in a (GaInSb/InAs)/GaInAlAsSb superlattice multiple quantum well measured with mid-wave infrared, subpicosecond photoluminescence upconversion
Applied physics letters, Vol.70(9), pp.1125-1127
03/03/1997
DOI: 10.1063/1.118504
Abstract
We have extended the technique of subpicosecond photoluminescence upconversion to the mid-wave infrared spectral region and have used this system to investigate the energy relaxation of hot, optically injected electron-hole pairs in a narrow-band-gap (2.32 mu m) (GaInSb/InAs)/GaInAlAsSb superlattice multiple quantum well. These and similar structures are currently of interest as the active region for mid-wave infrared diode lasers. The measurements demonstrate that carriers, which are injected with nearly 1 eV of excess energy, are well described by a hot, thermalized distribution in the wells within 2 ps after excitation. For a carrier density of 10(17) cm(-3), cooling by optical phonon emission is essentially complete 15 ps after injection. By fitting the time dependence of the carrier temperature, we estimate an effective carrier-optical-phonon scattering time of 1.2 ps. (C) 1997 American Institute of Physics.
Details
- Title: Subtitle
- Hot carrier dynamics in a (GaInSb/InAs)/GaInAlAsSb superlattice multiple quantum well measured with mid-wave infrared, subpicosecond photoluminescence upconversion
- Creators
- D J JangJ T Olesberg - University of IowaM E Flatte - University of IowaT F Boggess - University of IowaT C Hasenberg - HRL Laboratories
- Resource Type
- Journal article
- Publication Details
- Applied physics letters, Vol.70(9), pp.1125-1127
- Publisher
- Amer Inst Physics
- DOI
- 10.1063/1.118504
- ISSN
- 0003-6951
- eISSN
- 1077-3118
- Number of pages
- 3
- Language
- English
- Date published
- 03/03/1997
- Academic Unit
- Electrical and Computer Engineering; Physics and Astronomy
- Record Identifier
- 9984428836902771
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