Journal article
Hyperfine interaction and magnetoresistance in organic semiconductors
Physical review. B, Condensed matter and materials physics, Vol.74, 045213
07/26/2006
DOI: 10.1103/PhysRevB.74.045213
Abstract
We explore the possibility that hyperfine interaction causes the recently discovered organic magnetoresistance (OMAR) effect. Our study employs both experiment and theoretical modelling. An excitonic pair mechanism model based on hyperfine interaction, previously suggested by others to explain magnetic field effects in organics, is examined. Whereas this model can explain a few key aspects of the experimental data, we, however, uncover several fundamental contradictions as well. By varying the injection efficiency for minority carriers in the devices, we show experimentally that OMAR is only weakly dependent on the ratio between excitons formed and carriers injected, likely excluding any excitonic effect as the origin of OMAR.
Details
- Title: Subtitle
- Hyperfine interaction and magnetoresistance in organic semiconductors
- Creators
- Y ShengT D Nguyen - University of IowaG Veeraraghavan - University of IowaÖ Mermer - University of IowaM Wohlgenannt - University of Iowa, Physics and AstronomyU Scherf - University of Wuppertal
- Resource Type
- Journal article
- Publication Details
- Physical review. B, Condensed matter and materials physics, Vol.74, 045213
- DOI
- 10.1103/PhysRevB.74.045213
- ISSN
- 2469-9950
- eISSN
- 2469-9969
- Publisher
- American Physical Society; Ithaca
- Language
- English
- Date published
- 07/26/2006
- Academic Unit
- IIHR--Hydroscience and Engineering; Physics and Astronomy
- Record Identifier
- 9984424789502771
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