Journal article
Hysteretic control of organic conductance due to remanent magnetic fringe fields
Applied physics letters, Vol.102(4), 042408
01/28/2013
DOI: 10.1063/1.4790141
Abstract
Manipulation of the remanent (zero external magnetic field) magnetization state of a single ferromagnetic film is shown to control the room-temperature conductance of an organic semiconductor thin film deposited on top. For the organic semiconductor Alq3, the magnetic fringe fields from a multidomain remanent magnetization state of the film enhance the device conductance by several percent relative to its value for the magnetically saturated ferromagnetic film. The effect of fringe fields is insensitive to ferromagnetic film's thickness (which varies the fringe field magnitude proportionately) but sensitive to the magnetic domain's correlation length
Details
- Title: Subtitle
- Hysteretic control of organic conductance due to remanent magnetic fringe fields
- Creators
- F Macià - New York UniversityF Wang - University of IowaN. J Harmon - University of IowaM Wohlgenannt - University of IowaA. D KentM. E Flatté - University of Iowa
- Resource Type
- Journal article
- Publication Details
- Applied physics letters, Vol.102(4), 042408
- DOI
- 10.1063/1.4790141
- ISSN
- 0003-6951
- eISSN
- 1077-3118
- Grant note
- DOI: 10.13039/100000001, name: National Science Foundation, award: ECS 07-25280
- Language
- English
- Date published
- 01/28/2013
- Academic Unit
- Physics and Astronomy; Electrical and Computer Engineering
- Record Identifier
- 9984200027502771
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