Journal article
III-V interband 5.2 mu m laser operating at 185 K
Applied physics letters, Vol.71(26), pp.3764-3766
12/29/1997
DOI: 10.1063/1.120499
Abstract
We report the operation of a III-V interband laser at a wavelength beyond 5 mu m and temperatures above 90 K. The active region consists of a strain compensated broken gap four layer superlattice of InAs/Ga0.6In0.4Sb/InAs/Al0.3Ga0.42In0.28As0.5Sb0.5 grown by molecular beam epitaxy. The maximum operating temperature under 2.01 mu m pulsed optical excitation was 185 K at a wavelength of 5.2 mu m, The peak pump intensity at the 80 K threshold was 62 kW/cm(2), and the characteristic temperature (T-0) of the threshold intensity was 37 K. This T-0 is comparable to the best observed values for 3-4.5 mu m lasers based on the InAs/GaInSb material system. (C) 1997 American Institute of Physics. [S0003-6951(97)04252-6].
Details
- Title: Subtitle
- III-V interband 5.2 mu m laser operating at 185 K
- Creators
- M E Flatte - University of IowaT C Hasenberg - HRL LaboratoriesJ T Olesberg - University of IowaS A Anson - University of IowaT F Boggess - University of IowaC Yan - Kirtland Air Force BaseD L McDaniel
- Resource Type
- Journal article
- Publication Details
- Applied physics letters, Vol.71(26), pp.3764-3766
- Publisher
- Amer Inst Physics
- DOI
- 10.1063/1.120499
- ISSN
- 0003-6951
- eISSN
- 1077-3118
- Number of pages
- 3
- Language
- English
- Date published
- 12/29/1997
- Academic Unit
- Electrical and Computer Engineering; Physics and Astronomy
- Record Identifier
- 9984429025502771
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