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Impact of exposure settings variations on contrast and spatial resolution in complementary metal oxide semiconductor and direct-conversion complementary metal oxide semiconductor intraoral sensors
Journal article   Open access   Peer reviewed

Impact of exposure settings variations on contrast and spatial resolution in complementary metal oxide semiconductor and direct-conversion complementary metal oxide semiconductor intraoral sensors

Daniela Pita de Melo, Luiz Eduardo Marinho-Vieira, Caroline Hoang, Crystal Ly, Ryan Kuhn, Jacqueline Tkachuk and Saulo L. Sousa Melo
Dento-maxillo-facial radiology, 42538829
07/31/2026
DOI: 10.1093/dmfr/twag056
PMID: 42538829
url
https://doi.org/10.1093/dmfr/twag056View
Published (Version of record) Open Access

Abstract

Objectives: To evaluate the impact of exposure setting variations on contrast and spatial resolution (SR) in complementary metal oxide semiconductor (CMOS) and direct-conversion CMOS (DC-CMOS) intraoral sensors. Methods: Ten images of a digital dental quality assurance (DDQA) phantom were acquired for each assessed condition using 3 sensors (CMOS-I, CMOS-S, DC-CMOS) and 2 X-ray units (HH: handheld; WM: wall-mounted). HH was set at 60 kVp/2.5 mA, and WM was set at 60 kVp/7 mA and 70 kVp/7 mA. Each combined sensor-X-ray unit condition was exposed at 0.02, 0.04, 0.05, 0.08, 0.10, 0.16, 0.20, 0.25, 0.32, 0.40, 0.50, 0.63, 0.80, and 1.00 s. One observer selected 2 & times; 2 mm ROIs from the third and fifth steps of the DDQA step-wedge and measured their mean gray values using Fiji macro. Contrast was calculated by subtracting the mean gray value of the third step from the fifth step for each group. SR was determined by identifying the line pair with the highest value, in which 5 peaks and 4 valleys were distinguishable. Descriptive statistics were calculated for SR and 3-way ANOVA and Tukey's post hoc tests for contrast (alpha = 0.05). Results: Across all exposure parameters, CMOS-I exhibited the highest mean contrast, followed by DC-CMOS and CMOS-S (P < .001). HH yielded the highest mean contrast, which was significantly greater than WM (P < .001). CMOS-S exhibited the highest SR, and DC-CMOS the lowest, although SR remained constant for DC-CMOS across all exposure times. Conclusions: Sensor type, X-ray unit, and exposure time influenced image contrast and spatial resolution, while variations in kVp had minimal impact on these image quality parameters.
 Dentistry, Oral Surgery & Medicine Life Sciences & Biomedicine Radiology, Nuclear Medicine & Medical Imaging Science & Technology

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