Journal article
Improved performance of mid-infrared superlattice light emitting diodes grown epitaxially on silicon
Journal of crystal growth, Vol.507, pp.46-49
02/01/2019
DOI: 10.1016/j.jcrysgro.2018.10.047
Abstract
•Optical output of mid-infrared superlattice LEDs improved on silicon substrates.•Mid-IR SLEDs on Si perform better due to improved thermal management.•Mid-IR SLEDs on Si are limited mainly by Auger rather than defect scattering.
InAs/GaSb mid-infrared superlattice light emitting diodes (SLEDs) were grown and fabricated on miscut (1 0 0) Si. Compared to growth on lattice-matched GaSb substrates, SLEDs performed better at typical operating conditions due to improved thermal management and substrate transparency, and in spite of decreased minority carrier lifetime due to defects, as determined through spectrally resolved photoluminescence and ultrafast differential transmission measurements on comparable photoluminescence samples. For the smallest device sizes, this benefit was negated due to increased device failure at high current densities.
Details
- Title: Subtitle
- Improved performance of mid-infrared superlattice light emitting diodes grown epitaxially on silicon
- Creators
- A.J. Muhowski - University of IowaC.L. Bogh - University of IowaR.L. Heise - University of IowaT.F. Boggess - University of IowaJ.P. Prineas - University of Iowa
- Resource Type
- Journal article
- Publication Details
- Journal of crystal growth, Vol.507, pp.46-49
- Publisher
- Elsevier B.V
- DOI
- 10.1016/j.jcrysgro.2018.10.047
- ISSN
- 0022-0248
- eISSN
- 1873-5002
- Grant note
- name: Air Force Research Labs Munitions Directorate, award: FA8651-16-P-0241
- Language
- English
- Date published
- 02/01/2019
- Academic Unit
- Physics and Astronomy
- Record Identifier
- 9984428684602771
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