Journal article
InAs∕GaSb cascaded active region superlattice light emitting diodes for operation at 3.8μm
Applied physics letters, Vol.92(12), p.121106
03/24/2008
DOI: 10.1063/1.2892633
Abstract
We report on the growth and characterization of InAsGaSb superlattice light emitting diodes (LEDs) operating in the midwave infrared at 3.8 μm at 77 K. Devices were grown by solid source molecular beam epitaxy on (100) GaSb substrates and were fabricated into 120×120 μ m2 mesa devices using wet etching. By employing an eight-stage cascaded active region design, output powers in excess of 1.5 mW were achieved at 77 K with 100 mA peak drive current and a 50% duty cycle. Operating characteristics of the devices were examined from room temperature to 77 K under quasi-dc excitation conditions. © 2008 American Institute of Physics.
Details
- Title: Subtitle
- InAs∕GaSb cascaded active region superlattice light emitting diodes for operation at 3.8μm
- Creators
- E. J KoerperickJ. T OlesbergT. F BoggessJ. L HicksL. S WassinkL. M MurrayJ. P Prineas
- Resource Type
- Journal article
- Publication Details
- Applied physics letters, Vol.92(12), p.121106
- DOI
- 10.1063/1.2892633
- ISSN
- 0003-6951
- eISSN
- 1077-3118
- Language
- English
- Date published
- 03/24/2008
- Academic Unit
- Physics and Astronomy
- Record Identifier
- 9984199811102771
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