Journal article
Internal quantum efficiency measurements in InAs/GaSb superlattices for midinfrared emitters
Journal of applied physics, Vol.126(24), p.243101
12/28/2019
DOI: 10.1063/1.5129163
Abstract
The internal quantum efficiency of a series of InAs/GaSb superlattices was investigated as a function of carrier generation rate through variable excitation, quasicontinuous-wave photoluminescence measurements. GaSb thicknesses were varied to maximize the internal quantum efficiency for midwave infrared emission. Internal quantum efficiencies were determined from measurements of the photoluminescence radiance and extraction efficiencies computed within a two-slab model. The peak internal quantum efficiencies varied from 15% to 29% at 77 K, which is in good agreement with expectations from InAs/GaSb superlattice light-emitting diode performance.
Details
- Title: Subtitle
- Internal quantum efficiency measurements in InAs/GaSb superlattices for midinfrared emitters
- Creators
- A. J. Muhowski - University of IowaA. M. Muellerleile - University of IowaJ. T. Olesberg - University of IowaJ. P. Prineas - University of Iowa
- Resource Type
- Journal article
- Publication Details
- Journal of applied physics, Vol.126(24), p.243101
- DOI
- 10.1063/1.5129163
- ISSN
- 0021-8979
- eISSN
- 1089-7550
- Grant note
- name: Test Resource Management Center, Test & Evaluation/ Science & Technology; name: US Army, Program Executive Office for Simulation, Training, and Instrumentation
- Language
- English
- Date published
- 12/28/2019
- Academic Unit
- Physics and Astronomy
- Record Identifier
- 9984429016602771
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