Journal article
Intrinsic magnetic field effects in organic semiconductors
MRS bulletin, Vol.39(7), pp.590-595
07/2014
DOI: 10.1557/mrs.2014.132
Abstract
The effects of a magnetic field on the current in sandwich devices of a nonmagnetic material in-between two ferromagnetic electrodes are well known. However, magnetic-field effects also occur in the responses of devices of organic semiconductors sandwiched in-between non-ferromagnetic electrodes, providing an entirely new route toward organic spintronics. The precise origins of these “intrinsic” magnetic field effects are still unclear. They appear to be related to spin-selective reactions between paramagnetic entities such as electrons, holes, and triplet excitons. We present an overview of these effects and discuss three recent developments that shed new light on them: (1) tuning of the effects in molecularly engineered systems, (2) the discovery of ultrahigh magnetoresistance in molecular wires, and (3) the discovery of “fringe-field” magnetoresistance.
Details
- Title: Subtitle
- Intrinsic magnetic field effects in organic semiconductors
- Creators
- Markus Wohlgenannt - University of IowaPeter A Bobbert - Eindhoven University of TechnologyBert Koopmans - Eindhoven University of Technology
- Resource Type
- Journal article
- Publication Details
- MRS bulletin, Vol.39(7), pp.590-595
- Publisher
- Cambridge University Press
- DOI
- 10.1557/mrs.2014.132
- ISSN
- 0883-7694
- eISSN
- 1938-1425
- Number of pages
- 6
- Language
- English
- Date published
- 07/2014
- Academic Unit
- Physics and Astronomy
- Record Identifier
- 9984199821102771
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