Journal article
Investigations of InAs surface dots on InP
Applied physics letters, Vol.89(3), pp.033111-033111-3
07/17/2006
DOI: 10.1063/1.2226699
Abstract
We have fabricated InAs dots on the surface of InP, determined their structure, and measured the optical transition energy. This energy was found to be in excellent agreement with theoretical calculations, where no free parameters have been used. The calculations were performed using eight-band k center dot p theory in the envelope function approximation. We conclude that this theory is adequate to describe quantum dots also when one of the confining materials is vacuum. (c) 2006 American Institute of Physics.
Details
- Title: Subtitle
- Investigations of InAs surface dots on InP
- Creators
- Carl Ellström - Lund UniversityJohanna Trägårdh - Lund UniversityLars Samuelson - Lund UniversityWerner Seifert - Lund UniversityMats-Erik Pistol - Lund UniversityS Lemeshko - Research and Production Complex Technological CentreC Pryor - University of Iowa
- Resource Type
- Journal article
- Publication Details
- Applied physics letters, Vol.89(3), pp.033111-033111-3
- DOI
- 10.1063/1.2226699
- ISSN
- 0003-6951
- eISSN
- 1077-3118
- Language
- English
- Date published
- 07/17/2006
- Academic Unit
- Physics and Astronomy
- Record Identifier
- 9984429057602771
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