Journal article
Ion impact etch anisotropy downstream from diffusion plasma sources
Journal of vacuum science & technology. A, Vacuum, surfaces, and films, Vol.9(6), pp.3178-3180
11/01/1991
DOI: 10.1116/1.577142
Abstract
Plasma processing in chambers located downstream from a source are gaining widespread use because they allow etching and deposition with minimal damage. This minimized damage, however, is achieved by using a low ion impact energy, which can lead to a poorer etch anisotropy. The best anisotropy for a given impact energy requires the lowest possible ion temperature. Laser‐induced fluorescence measurements show that room temperature ions can be attained using a multidipole‐confined discharge. In comparison, ion temperatures downstream from electron cyclotron resonance sources are much hotter, according to recent reports.
Details
- Title: Subtitle
- Ion impact etch anisotropy downstream from diffusion plasma sources
- Creators
- M. J. Goeckner - University of IowaJ. Goree - University of IowaT. E. Sheridan - University of Iowa
- Resource Type
- Journal article
- Publication Details
- Journal of vacuum science & technology. A, Vacuum, surfaces, and films, Vol.9(6), pp.3178-3180
- DOI
- 10.1116/1.577142
- ISSN
- 0734-2101
- eISSN
- 1520-8559
- Number of pages
- 3
- Language
- English
- Date published
- 11/01/1991
- Academic Unit
- Physics and Astronomy; Mechanical Engineering
- Record Identifier
- 9984429044102771
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