Journal article
Landé g Factors and Orbital Momentum Quenching in Semiconductor Quantum Dots
Physical review letters, Vol.96(2), 026804
01/20/2006
DOI: 10.1103/PhysRevLett.96.026804
PMID: 16486614
Abstract
We show that electron and hole Landé g factors in self-assembled III-V quantum dots have a rich structure intermediate between that of paramagnetic atomic impurities and bulk semiconductors. Strain, dot geometry, and confinement energy modify the effective g factors, yet are insufficient to explain our results. We find that the dot's discrete energy spectrum quenches the orbital angular momentum, pushing the electron g factor towards 2, even when all the materials have negative bulk g factors. The approximate shape of a dot can be determined from measurements of the g factor asymmetry. © 2006 The American Physical Society.
Details
- Title: Subtitle
- Landé g Factors and Orbital Momentum Quenching in Semiconductor Quantum Dots
- Creators
- Craig E. Pryor - University of IowaMichael E. Flatté - University of Iowa
- Resource Type
- Journal article
- Publication Details
- Physical review letters, Vol.96(2), 026804
- DOI
- 10.1103/PhysRevLett.96.026804
- PMID
- 16486614
- ISSN
- 0031-9007
- eISSN
- 1079-7114
- Language
- English
- Date published
- 01/20/2006
- Academic Unit
- Electrical and Computer Engineering; Physics and Astronomy
- Record Identifier
- 9984429021502771
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