Journal article
Leakage mechanisms and potential performance of molecular-beam epitaxially grown GaInAsSb 2.4 mu m photodiode detectors
Journal of applied physics, Vol.103(10), pp.104511-104511-9
05/15/2008
DOI: 10.1063/1.2932080
Abstract
We report on the growth, processing, and characterization of uncoated, unpassivated GaInAsSb detector mesa photodiodes with a cutoff wavelength of 2.4 mu m. We find peak room temperature specific detectivity value of 6 x 10(10) cm Hz(1/2)/W and maximum zero-bias resistivity of 25 Omega cm(2). The zero-bias resistivities of mesas with areas ranging from 50(2) mu m(2) to 1 mm(2) were found to be limited by generation-recombination currents at mesa sidewalls. At low temperatures, devices were limited by Ohmic leakage, which is likely due to the formation of oxides on the sidewalls. After 6 months of aging, Ohmic leakage becomes the limiting factor at room temperature as well. Based on experimentally obtained material parameters in this and other studies, an upper limit D(*) and R(0)A were estimated for GaInAsSb materials and compared to those HgCdTe and InGaAs. (C) 2008 American Institute of Physics.
Details
- Title: Subtitle
- Leakage mechanisms and potential performance of molecular-beam epitaxially grown GaInAsSb 2.4 mu m photodiode detectors
- Creators
- J. P. Prineas - University of IowaJ. Yager - University of IowaS. Seyedmohamadi - University of IowaJ. T. Olesberg - University of Iowa
- Resource Type
- Journal article
- Publication Details
- Journal of applied physics, Vol.103(10), pp.104511-104511-9
- Publisher
- Amer Inst Physics
- DOI
- 10.1063/1.2932080
- ISSN
- 0021-8979
- eISSN
- 1089-7550
- Number of pages
- 9
- Language
- English
- Date published
- 05/15/2008
- Academic Unit
- Physics and Astronomy
- Record Identifier
- 9984429019902771
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