Journal article
Long interior carrier lifetime in selective-area InAs nanowires on silicon
Optical materials express, Vol.10(10), pp.2470-2479
10/01/2020
DOI: 10.1364/OME.403531
Abstract
Catalyst-free, position-controlled indium arsenide (InAs) nanowires (NWs) of variable diameters were grown on Si (111) by selective-area epitaxy (SAE). Ultrafast pumpprobe spectroscopy was conducted, from which carrier recombination mechanisms on the NW surface and interior were resolved and characterized. NWs grown using SAE demonstrated high optical quality, showing minority carrier lifetimes more than two-fold longer than that of the randomly-positioned (RP) NWs. The extracted SAE-InAs NW interior recombination lifetime was found to be as long as 7.2 ns, 13X longer than previous measurements on RP-NWs; and the surface recombination velocity 4154 cm s-1. Transmission electron microscopy revealed a high density of stacking defects within the NWs, suggesting that interior recombination lifetime can be further increased by improving NW interior crystalline quality.
Details
- Title: Subtitle
- Long interior carrier lifetime in selective-area InAs nanowires on silicon
- Creators
- Kailing Zhang - University of IowaXinxin Li - University of IowaAlexander C Walhof - University of IowaYuzi Liu - Argonne National LaboratoryFatima Toor - University of IowaJohn P Prineas - University of Iowa
- Resource Type
- Journal article
- Publication Details
- Optical materials express, Vol.10(10), pp.2470-2479
- DOI
- 10.1364/OME.403531
- ISSN
- 2159-3930
- eISSN
- 2159-3930
- Grant note
- DOI: 10.13039/100000001, name: National Science Foundation, award: EPM-1608714; DOI: 10.13039/100000015, name: U.S. Department of Energy, award: DE-AC02-06CH11357; DOI: 10.13039/100006132, name: Office of Science, award: DE-AC02-06CH11357; DOI: 10.13039/100006151, name: Basic Energy Sciences, award: DE-AC02-06CH11357
- Language
- English
- Date published
- 10/01/2020
- Academic Unit
- Iowa Technology Institute; Holden Comprehensive Cancer Center; Physics and Astronomy; Electrical and Computer Engineering
- Record Identifier
- 9984197267502771
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