Journal article
Long wavelength InAs/InGaSb infrared detectors: Optimization of carrier lifetimes
Journal of applied physics, Vol.78(12), pp.7143-7152
12/15/1995
DOI: 10.1063/1.360422
Abstract
The performance characteristics of type-II InAs/InxGa1-xSb superlattices for long and very long-wave infrared detection are discussed. This system promises benefits in this wavelength range over conventional technology based on Hg1-xCdxTe, in part because of suppressed band-to-band Auger recombination rates which lead to improved values of detectivity. The formalism for calculating Auger rates in superlattices is developed and the physical origin of Auger suppression in these systems is discussed. Accurate K . p band structures are used to obtain radiative, electron-electron, hole-hole, and band-to-band Auger rules, as well as shallow trap level assisted Auger recombination rates for photodiodes. Theoretical limits for high temperature operation of ideal photovoltaic detectors are presented and compared with HgCdTe. (C) 1995 American Institute of Physics.
Details
- Title: Subtitle
- Long wavelength InAs/InGaSb infrared detectors: Optimization of carrier lifetimes
- Creators
- C H Grein - University of Illinois at ChicagoP M Young - Harvard UniversityM E Flatte - Harvard UniversityH Ehrenreich - Harvard University
- Resource Type
- Journal article
- Publication Details
- Journal of applied physics, Vol.78(12), pp.7143-7152
- Publisher
- Amer Inst Physics
- DOI
- 10.1063/1.360422
- ISSN
- 0021-8979
- eISSN
- 1089-7550
- Number of pages
- 10
- Language
- English
- Date published
- 12/15/1995
- Academic Unit
- Electrical and Computer Engineering; Physics and Astronomy
- Record Identifier
- 9984428834702771
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