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Low-Temperature Solvothermal Route to GaN Nanoparticles
Journal article   Peer reviewed

Low-Temperature Solvothermal Route to GaN Nanoparticles

Jianjun Wang, Luke Grocholl and Edward G Gillan
MRS proceedings, Vol.676, p.Y8.15.6
2001
DOI: 10.1557/PROC-676-Y8.15

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Abstract

We report a straightforward, non-aqueous solvothermal method for the production of nanoscale gallium nitride structures. Nanoparticles with spherical and rod-like morphologies are produced via in situ gallium azide precursor synthesis and decomposition in superheated toluene or THF. The solution reaction between gallium chloride and sodium azide produces an insoluble azide precursor that is then solvothermally decomposed to GaN at temperatures below 260 °C. The resulting products are poorly crystalline but thermally stable and crystallize to hexagonal GaN upon annealing at 750 °C. Product morphologies include spherical particles (ca. 50 nm) and nanorods. Upon annealing, the nanoparticles coalesce into larger organized crystalline structures with hexagonal facets.

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