Journal article
Low-temperature deposition of carbon nitride films from a molecular azide, (C 3N 3)(N 3) 3
Thin solid films, Vol.422(1), pp.62-68
2002
DOI: 10.1016/S0040-6090(02)00982-3
Abstract
We report the lowest-temperature chemical vapor deposition process for the growth of amorphous carbon nitride (CN
x
) films. The precursor, triazidotriazine or (C
3N
3)(N
3)
3, contains only CN or NN bonds, and evaporates and decomposes to carbon nitride films by 250 °C. Infrared and X-ray photoelectron spectroscopy (XPS) show that the amorphous films have primarily sp
2-bonded structures with some retention of the precursor aromatic triazine ring (C
3N
3) character. Auger and XPS results show that the film composition is near CN
1.5 (C
3N
4.5). Electron microscopy demonstrates that the CN
x
films have small particle domains near 50 nm and some porosity. The films exhibit strong UV absorption and weak photoluminescent emission below 500 nm.
Details
- Title: Subtitle
- Low-temperature deposition of carbon nitride films from a molecular azide, (C 3N 3)(N 3) 3
- Creators
- Jianjun WangEdward G Gillan
- Resource Type
- Journal article
- Publication Details
- Thin solid films, Vol.422(1), pp.62-68
- Publisher
- Elsevier B.V
- DOI
- 10.1016/S0040-6090(02)00982-3
- ISSN
- 0040-6090
- eISSN
- 1879-2731
- Language
- English
- Date published
- 2002
- Academic Unit
- Chemistry
- Record Identifier
- 9984001166802771
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