Journal article
Low-temperature solvothermal synthesis of nanocrystalline indium nitride and Ga–In–N composites from the decomposition of metal azides
Journal of materials chemistry, Vol.16(38), pp.3774-3784
2006
DOI: 10.1039/B608204A
Abstract
Nanocrystalline InN powders have been synthesized through metal azide decomposition in superheated toluene and refluxing hexadecane solvents near 280 °C. The metal azide intermediates were formed in situ through the metathesis reaction of InBr3 and NaN3. The InN products from toluene consist of ∼10 nm hexagonal (wurtzite) structured crystallites in aggregated arrangements. InN from hexadecane and lower temperature toluene reactions produced more poorly crystalline InN that appears to contain a cubic (zinc blende) component. Coordinating amine solvents led to decomposition of the nitride to indium metal. Several reactions were undertaken to produce mixed metal nitrides of the form Ga1−zInzN where z is 0.5 and 0.75. The mixed metal nitride products are analytically consistent with composite versus solid-solution formation, however some metal mixing is observed. Data from X-ray diffraction, electron microscopy, thermal analysis, elemental analysis, and several spectroscopic methods are combined to form a consistent picture of the bulk and surface structures for these nanocrystalline InN materials.
Details
- Title: Subtitle
- Low-temperature solvothermal synthesis of nanocrystalline indium nitride and Ga–In–N composites from the decomposition of metal azides
- Creators
- Jonglak ChoiEdward G Gillan
- Resource Type
- Journal article
- Publication Details
- Journal of materials chemistry, Vol.16(38), pp.3774-3784
- DOI
- 10.1039/B608204A
- ISSN
- 0959-9428
- eISSN
- 1364-5501
- Language
- English
- Date published
- 2006
- Academic Unit
- Chemistry
- Record Identifier
- 9984001244402771
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