Journal article
MBE-grown high-efficiency GaInAsSb mid-infrared detectors operating under back illumination
Semiconductor science and technology, Vol.21(3), pp.267-272
2006
DOI: 10.1088/0268-1242/21/3/009
Abstract
This paper describes molecular beam epitaxial growth, processing and room temperature characterization of lattice-matched GaInAsSb mid-infrared detectors on GaSb substrates for room temperature operation. For the first time, we demonstrate GaInAsSb detectors operating under back-illumination, a critically important geometry for flip-chip-mounted focal plane arrays, and achieve performance equal or superior to front-illuminated detectors. Very high quantum efficiency and flat spectral response are achieved for the back-illuminated detectors due to improved carrier collection efficiency, photon recycling and reduced carrier recombination. In situ RHEED intensity oscillations and post-growth XRD are used for coarse and fine tuning of GaInAsSb lattice matching, respectively.
Details
- Title: Subtitle
- MBE-grown high-efficiency GaInAsSb mid-infrared detectors operating under back illumination
- Creators
- M. H. M Reddy - University of IowaJ. T Olesberg - University of IowaC Cao - University of IowaJ. P Prineas - University of Iowa
- Resource Type
- Journal article
- Publication Details
- Semiconductor science and technology, Vol.21(3), pp.267-272
- Publisher
- Institute of Physics
- DOI
- 10.1088/0268-1242/21/3/009
- ISSN
- 0268-1242
- eISSN
- 1361-6641
- Language
- English
- Date published
- 2006
- Academic Unit
- Physics and Astronomy
- Record Identifier
- 9984199798502771
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