Journal article
Magnetic Field Sensors based on Magnetoresistance Effect in Organic Semiconductor Sandwich Devices
MRS proceedings, Vol.906, pp.49-54
2005
DOI: 10.1557/PROC-0906-HH03-07
Abstract
We describe magnetic field sensors based on a recently discovered magnetoresistance (MR) effect in nonmagnetic organic semiconductor sandwich devices. The MR effect reaches up to 10% in a magnetic field of 10 mT at room temperature. We perform an extensive experimental characterization of this effect. We found that the MR effect is only weakly temperature dependent and does not depend on sign and direction of the applied magnetic field. We also measured the device response to alternating magnetic fields up to 100 kHz. To the best of our knowledge, the discovered MR effect is not adequately described by any of the MR mechanisms known to date.
Details
- Title: Subtitle
- Magnetic Field Sensors based on Magnetoresistance Effect in Organic Semiconductor Sandwich Devices
- Creators
- Govindarajan Veeraraghavan - University of IowaÖmer Mermer - University of IowaYugang Sheng - University of IowaTho Duc Nguyen - University of IowaThomas Lee Francis - University of IowaMarkus Wohlgenannt - University of Iowa
- Contributors
- J-P. Wang (Editor)W.F. Egelhoff (Editor)H. Bruckl (Editor)M. Tondra (Editor)
- Resource Type
- Journal article
- Publication Details
- MRS proceedings, Vol.906, pp.49-54
- DOI
- 10.1557/PROC-0906-HH03-07
- ISSN
- 0272-9172
- eISSN
- 1946-4274
- Publisher
- Cambridge University Press
- Number of pages
- 6
- Language
- English
- Date published
- 2005
- Academic Unit
- IIHR--Hydroscience and Engineering; Physics and Astronomy
- Record Identifier
- 9984428669102771
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