Journal article
Magnetic field dependence of sputtering magnetron efficiency
Applied physics letters, Vol.59(9), pp.1052-1054
1991
DOI: 10.1063/1.106342
Abstract
A Monte Carlo simulation of electron transport is used to predict the dependence of the ionization efficiency on the magnetic field strength of a planar magnetron. This offers insight into the operation of the magnetron, and it also provides two valuable practical results. First, the efficiency increases with field strength only up to a saturation level. Operating a magnetron with a stronger field strength would only lead to an undesirable loss of target utilization. Second, a scaling law is found that is useful for designing magnetrons of different sizes.
Details
- Title: Subtitle
- Magnetic field dependence of sputtering magnetron efficiency
- Creators
- J Goree - Univ. Iowa, dep. physics astronomy, Iowa City IA 52242, United StatesT. E Sheridan - Univ. Iowa, dep. physics astronomy, Iowa City IA 52242, United States
- Resource Type
- Journal article
- Publication Details
- Applied physics letters, Vol.59(9), pp.1052-1054
- Publisher
- American Institute of Physics
- DOI
- 10.1063/1.106342
- ISSN
- 0003-6951
- eISSN
- 1077-3118
- Language
- English
- Date published
- 1991
- Academic Unit
- Physics and Astronomy; Mechanical Engineering
- Record Identifier
- 9984199943702771
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