Journal article
Metal assisted catalyzed etched (MACE) black Si: optics and device physics
Nanoscale, Vol.8(34), pp.15448-15466
08/25/2016
DOI: 10.1039/c6nr04506e
PMID: 27533490
Abstract
Metal-assisted catalyzed etching (MACE) of silicon (Si) is a controllable, room-temperature wet-chemical technique that uses a thin layer of metal to etch the surface of Si, leaving behind various nano- and micro-scale surface features, including nanowires (NWs), that can be tuned to achieve various useful engineering goals, in particular with respect to Si solar cells. In this review, we introduce the science and technology of MACE from the literature, and provide an in-depth analysis of MACE to enhance Si solar cells, including the outlook for commercial applications of this technology.
Details
- Title: Subtitle
- Metal assisted catalyzed etched (MACE) black Si: optics and device physics
- Creators
- Fatima Toor - University of IowaJeffrey B Miller - Bandgap Engineering Inc., 13 Garabedian Drive, Salem, NH 03079, USALauren M Davidson - University of IowaWenqi Duan - University of IowaMichael P Jura - Bandgap Engineering Inc., 13 Garabedian Drive, Salem, NH 03079, USAJoanne Yim - Bandgap Engineering Inc., 13 Garabedian Drive, Salem, NH 03079, USAJoanne Forziati - Advanced Silicon Group, 173 Bedford Road, Lincoln, MA 01773, USAMarcie R Black - Advanced Silicon Group, 173 Bedford Road, Lincoln, MA 01773, USA
- Resource Type
- Journal article
- Publication Details
- Nanoscale, Vol.8(34), pp.15448-15466
- DOI
- 10.1039/c6nr04506e
- PMID
- 27533490
- ISSN
- 2040-3364
- eISSN
- 2040-3372
- Language
- English
- Date published
- 08/25/2016
- Academic Unit
- Electrical and Computer Engineering; Physics and Astronomy
- Record Identifier
- 9984197194702771
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