Journal article
Mid-infrared InAs/GaInSb separate confinement heterostructure laser diode structures
Journal of applied physics, Vol.89(6), pp.3283-3289
03/15/2001
DOI: 10.1063/1.1346657
Abstract
Despite recent progress in electronic structure engineering of type-II materials for mid-infrared lasers, suppression of Auger recombination at room temperature has been limited. We present an active region design, consisting of AlAsSb/InAs/GaInSb/InAs/AlAsSb wells separated by an InAs/AlGaSb superlattice, that overcomes this limitation. The 300 K calculated Auger recombination rate in this structure at the optimal lasing density is five times smaller than typical Shockley-Read-Hall (defect-assisted) recombination rates. An integrated separate confinement heterostructure design suitable for this active region is also described. The separate confinement region, which is a lightly doped InAs/AlGaSb superlattice, provides efficient hole transport and injection into the active region. For an estimated nonactive region modal cavity loss of 20 cm(-1) and an optical mode width of 1.3 mum, the calculated internal threshold current density is 100 A/cm(2) at 300 K for a single quantum well device. (C) 2001 American Institute of Physics.
Details
- Title: Subtitle
- Mid-infrared InAs/GaInSb separate confinement heterostructure laser diode structures
- Creators
- J T Olesberg - University of IowaM E Flatte - University of IowaT C Hasenberg - University of IowaC H Grein - University of Illinois Chicago
- Resource Type
- Journal article
- Publication Details
- Journal of applied physics, Vol.89(6), pp.3283-3289
- DOI
- 10.1063/1.1346657
- ISSN
- 0021-8979
- eISSN
- 1089-7550
- Publisher
- Amer Inst Physics
- Number of pages
- 7
- Language
- English
- Date published
- 03/15/2001
- Academic Unit
- Electrical and Computer Engineering; Physics and Astronomy
- Record Identifier
- 9984428681702771
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