Journal article
Modeling of Near Zero-Field Magnetoresistance and Electrically Detected Magnetic Resonance in Irradiated Si/SiO2 MOSFETs
IEEE transactions on nuclear science, Vol.67(7), pp.1669-1673
07/2020
DOI: 10.1109/TNS.2020.2981495
Abstract
Near zero-field magnetoresistance (NZFMR) spectroscopy has the potential to provide chemical and physical information on radiation damage in 3-D integrated circuits. Electrically detected magnetic resonance (EDMR) has provided chemical and physical information for several decades but is limited in applicability due to the need for an RF electromagnetic field. We model NZFMR and EDMR in Si/SiO 2 metal-oxide-semiconductor field-effect transistors (MOSFETs) by including spin-dependent recombination and hyperfine interactions in stochastic Liouville equations. We find that to accurately describe both NZFMR and EDMR, both the defect spin and conduction spin has to interact with a bath of nuclear spins, which are assumed to be composed of combinations of 29 Si and hydrogen.
Details
- Title: Subtitle
- Modeling of Near Zero-Field Magnetoresistance and Electrically Detected Magnetic Resonance in Irradiated Si/SiO2 MOSFETs
- Creators
- Nicholas J. Harmon - University of EvansvilleStephen R. Mcmillan - University of IowaJames P. Ashton - Pennsylvania State UniversityPatrick M. Lenahan - Pennsylvania State UniversityMichael E. Flatte - University of Iowa
- Resource Type
- Journal article
- Publication Details
- IEEE transactions on nuclear science, Vol.67(7), pp.1669-1673
- Publisher
- IEEE
- DOI
- 10.1109/TNS.2020.2981495
- ISSN
- 0018-9499
- eISSN
- 1558-1578
- Grant note
- HDTRA 1-18-1-0012; HDTRA 1-16-0008 / Department of the Defense, Defense Threat Reduction Agency (10.13039/100000774)
- Language
- English
- Date published
- 07/2020
- Academic Unit
- Electrical and Computer Engineering; Physics and Astronomy
- Record Identifier
- 9984428768902771
Metrics
2 Record Views