Molecular beam epitaxy growth of high quantum efficiency InAs/GaSb superlattice detectors

G. J. Sullivan; A. Ikhlassi; J. Bergman; R. E. DeWames; J. R. Waldrop; C. Grein; M. Flatté; K. Mahalingam; H. Yang; M. Zhong; M. Weimer

doi:10.1116/1.1928238

Journal article

Molecular beam epitaxy growth of high quantum efficiency InAs/GaSb superlattice detectors

G. J. Sullivan, A. Ikhlassi, J. Bergman, R. E. DeWames, J. R. Waldrop, C. Grein, M. Flatté, K. Mahalingam, H. Yang, M. Zhong, …

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol.23(3), pp.1144-1148

05/01/2005

DOI: 10.1116/1.1928238

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Abstract

InAs/GaSb superlattices are leading candidates for next generation long-wave infrared and very-long-wave infrared photodetectors. These heterostructures are expected to hold important advantages over existing materials systems, primarily bulk HgCdTe alloys. To realize their inherent potential, however, superlattice materials with low defect density and improved device characteristics must be demonstrated. Here, we report on the molecular beam epitaxy growth and characterization of an 11 μm cutoff wavelength InAs/GaSb superlattice detector with a state-of-the-art single-pass, internal quantum efficiency of 36%. The shutter sequencing used to form the GaSb-on-InAs and InAs-on-GaSb superlattice heterojunctions is described in detail, and the latter specifically identified as a source of morphological defects in these devices.

Details

Title: Subtitle: Molecular beam epitaxy growth of high quantum efficiency InAs/GaSb superlattice detectors
Creators: G. J. Sullivan - Rockwell
A. Ikhlassi - Rockwell
J. Bergman - Rockwell
R. E. DeWames - Rockwell
J. R. Waldrop - Rockwell
C. Grein - University of Illinois Chicago
M. Flatté - OSTC and Department of Physics and Astronomy, University of Iowa, Iowa City, Iowa 52242-1479
K. Mahalingam - Wright-Patterson Air Force Base
H. Yang - Texas A&M University
M. Zhong - Texas A&M University
M. Weimer - Texas A&M University
Resource Type: Journal article
Publication Details: Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol.23(3), pp.1144-1148
DOI: 10.1116/1.1928238
ISSN: 0734-211X
eISSN: 1520-8567
Number of pages: 5
Language: English
Date published: 05/01/2005
Academic Unit: Electrical and Computer Engineering; Physics and Astronomy
Record Identifier: 9984428806302771

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