Journal article
N-nH complexes in GaAs studied at the atomic scale by cross-sectional scanning tunneling microscopy
Physical review. B, Vol.102(12), p.1
09/11/2020
DOI: 10.1103/PhysRevB.102.125304
Abstract
Hydrogenation of nitrogen (N) doped GaAs allows for reversible tuning of the band gap and the creation of site controlled quantum dots through the manipulation of N-nH complexes, N-nH complexes, wherein a nitrogen atom is surrounded by n hydrogen (H) atoms. Here we employ cross-sectional scanning tunneling microscopy (X-STM) to study these complexes in the GaAs (110) surface at the atomic scale. In addition to that we performed density functional theory (DFT) calculations to determine the atomic properties of the N-nH complexes. We argue that at or near the (110) GaAs surface two H atoms from N-nH complexes dissociate as an H2 molecule. We observe multiple features related to the hydrogenation process, of which a subset is classified as N-1H complexes. These N-1H related features show an apparent reduction of the local density of states (LDOS), characteristic to N atoms in the GaAs (110) surface with an additional apparent localized enhancement of the LDOS located in one of three crystal directions. N-nH features can be manipulated with the STM tip. Showing in one case a switching behavior between two mirror-symmetric states and in another case a removal of the localized enhancement of the LDOS. The disappearance of the bright contrast is most likely a signature of the removal of an H atom from the N-nH complex.
Details
- Title: Subtitle
- N-nH complexes in GaAs studied at the atomic scale by cross-sectional scanning tunneling microscopy
- Creators
- D. Tjeertes - Eindhoven University of TechnologyT. J. F. Verstijnen - Eindhoven University of TechnologyA. Gonzalo - Universidad Politécnica de MadridJ. M. Ulloa - Universidad Politécnica de MadridM. S. Sharma - Sapienza University of RomeM. Felici - Sapienza University of RomeA. Polimeni - Sapienza University of RomeF. Biccari - University of FlorenceM. Gurioli - University of FlorenceG. Pettinari - Center for Biomolecular NanotechnologiesC. Sahin - University of IowaM. E. Flatte - Eindhoven University of TechnologyP. M. Koenraad - Eindhoven University of Technology
- Resource Type
- Journal article
- Publication Details
- Physical review. B, Vol.102(12), p.1
- DOI
- 10.1103/PhysRevB.102.125304
- ISSN
- 2469-9950
- eISSN
- 2469-9969
- Publisher
- Amer Physical Soc
- Number of pages
- 10
- Grant note
- 641899 / European Unions Horizon 2020 Research and Innovation Program under the Marie Skodowska-Curie Grant Sapienza Universita di Roma via Fondi Ateneo 2018-2019, SapiExcellence 13/2008; 85-2017-15200 / Regione Lazio Program Progetti di Gruppi di ricerca legge Regionale Avvio alla Ricerca DMR-1921877 / NSF DMREF program; National Science Foundation (NSF); NSF - Directorate for Computer & Information Science & Engineering (CISE) MAT2016-77491-C2-1-R / Spanish MINECO; Spanish Government
- Language
- English
- Date published
- 09/11/2020
- Academic Unit
- Electrical and Computer Engineering; Physics and Astronomy
- Record Identifier
- 9984428824402771
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